M. Engelhardt

Vertically integrated circuits : A key technology for future high performance systems

C. Landesberger, H. Jacobs, Siegfried Schwarzl, 1997 .

Gate Oxide Quality of DRAM Trench Capacitors

M. Engelhardt, S. Rohl, W.-U. Kellner, 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

Scaling laws for the resistivity increase of sub-100 nm interconnects

G. Schindler, G. Steinlesberger, G. Schindler, 2003, International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003..