Konstantin Bourdelle

Improved GeOI substrates for pMOSFET off-state leakage control

Emmanuel Augendre, Sorin Cristoloveanu, Eric Guiot, 2009 .

Understanding and optimizing the floating body retention in FDSOI UTBOX

Cor Claeys, Eddy Simoen, Marc Aoulaiche, 2016 .

Strained Si and SiGe tunnel-FETs and complementary tunnel-FET inverters with minimum gate lengths of 50 nm

Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, 2014 .

Challenges and Progress in Germanium-on-Insulator Materials and Device Development towards ULSI Integration

Emmanuel Augendre, Maud Vinet, Sorin Cristoloveanu, 2009 .

Experimental demonstration of strained Si nanowire GAA n-TFETs and inverter operation with complementary TFET logic at low supply voltages

Sebastiano Strangio, Gia Vinh Luong, Qing-Tai Zhao, 2016 .

Stress Metrology : The challenge for the next generation of engineered wafers

Vincent Paillard, Ian Cayrefourcq, Nicolas Daval, 2004 .

Elastic strain and dopant activation in ion implanted strained Si nanowires

Reinhard Carius, Dan Buca, R. A. Minamisawa, 2010 .