S. Nojima

发表

Effects of photoexcited carriers on dynamic response of quantum-well optical modulators

O. Mitomi, P. Larsen, K. Wakita, 1991 .

Selective Influx of Light into Localized States as Clarified Using Fano Effects in Photonic Crystals

S. Nojima, M. Yawata, 2010 .

Strong Confinement of Light in a Closed Periodic Array of Microstructures(Electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid mechanics)

S. Nojima, 2007 .

Mixing of Optical Modes in a Mechanically Perturbed Microstructure

S. Nojima, 2004 .

Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa chemical etching

T. Tamamura, M. Notomi, M. Naganuma, 1991 .

Deep electron trapping center in Si‐doped InGaAlP grown by molecular‐beam epitaxy

H. Asahi, Hidenao Tanaka, S. Nojima, 1986 .

Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs. II: Distribution among samples

H. Asahi, T. Ikoma, S. Nojima, 1987 .

Slow‐relaxation phenomena in photoconductivity for semi‐insulating GaAs

S. Nojima, 1985 .

A new slow‐relaxation phenomenon in semi‐insulating GaAs

S. Nojima, 1985 .

An interfacial property of the InGaAs/Semi‐insulating InP structure prepared by metal organic vapor phase epitaxy

H. Nagai, H. Asahi, S. Nojima, 1985 .

Anomaly of Electrical Activation of As Atoms Implanted in Si by Additional Ne Irradiation

S. Nojima, 1978 .

Optical-gain enhancement in two-dimensional active photonic crystals

Shunji Nojima, S. Nojima, 2001 .

Band‐edge optical absorption spectra of GaAs quantum wires calculated by multiband effective mass theory

H. Ando, S. Nojima, H. Kanbe, 1993 .

Deep Electron Trapping Centers in Si-Doped InAlAs Grown by Molecular Beam Epitaxy

Y. Kawamura, H. Asahi, S. Nojima, 1987 .

InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy

K. Wakita, Y. Kawamura, H. Asahi, 1987 .

Metalorganic–vapor‐phase‐epitaxial growth of Mg‐doped Ga1−xAlxAs layers and their properties

A. Kozen, H. Asahi, S. Nojima, 1986 .

Refractive index of InGaAs/InAlAs multiquantum‐well layers grown by molecular‐beam epitaxy

H. Asahi, S. Nojima, H. Asahi, 1988 .

Widely tunable lifetimes for donor-acceptor pair states created by displacing an intrinsic atom in photonic crystals

S. Nojima, M. Nakahata, 2009 .

Asymmetric transmission of terahertz waves using polar dielectrics.

E. Ozbay, A. Serebryannikov, S. Nojima, 2014, Optics express.

Effect of in-material losses on terahertz absorption, transmission, and reflection in photonic crystals made of polar dielectrics

E. Ozbay, K. Alici, A. Serebryannikov, 2015 .

One-way absorption of terahertz waves in rod-type and multilayer structures containing polar dielectrics

E. Ozbay, A. Serebryannikov, S. Nojima, 2014 .

Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures

Osamu Mikami, Koichi Wakita, Yuichi Kawamura, 1988 .

Quantitative isolation of band-gap formation mechanisms by randomizing the lattice arrangement in photonic crystals

S. Nojima, K. Aizawa, G. Kaneda, 2013 .

Irreducible First Brillouin-Zone for Two-Dimensional Binary-Compound Photonic Crystals(Electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid mechanics)

S. Nojima, Y. Kamakura, 2008 .

Laser annealing effects in ion‐implanted GaAs

S. Nojima, 1982 .

Defects in GaAs induced by laser annealing

S. Nojima, 1981 .

An Anomalous Aspect of GaAs Surface Dissociation by Q‐Switch Pulsed Ruby Laser Irradiation

S. Nojima, 1982 .

Silicon Doping in InP Grown by Metalorganic Vapor Phase Epitaxy Using Silane

H. Asahi, S. Nojima, M. Oishi, 1985 .

Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum‐well structures

Y. Kawamura, H. Asahi, S. Nojima, 1988 .

Enhancement of Optical Gain in Two-Dimensional Photonic Crystals with Active Lattice Points

Shunji Nojima, S. Nojima, 1998 .