F. L. Martı́nez

发表

Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

W. Bohne, J. Röhrich, Erik Strub, 2007 .

Molecular models and activation energies for bonding rearrangement in plasma-deposited a − SiN x : H dielectric thin films treated by rapid thermal annealing

Germán González-Díaz, W. Bohne, J. Röhrich, 2001 .

Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

I. Mártil, G. González-Díaz, Á. D. Prado, 2003 .

Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices

I. Mártil, Á. D. Prado, F. López, 2001 .

Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance

I. Mártil, G. González-Díaz, Á. D. Prado, 1999 .

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

I. Mártil, Á. D. Prado, F. López, 2000 .

Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

I. Mártil, G. González-Díaz, Á. D. Prado, 2003 .

Influence of rapid thermal annealing processes on the properties of SiNx:H films deposited by the electron cyclotron resonance method

I. Mártil, G. González-Díaz, I. Sieber, 1998 .