M. Schwarz

$\hbox{MOS}^{3}$: A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs

A. Kloes, M. Schwarz, T. Holtij, 2012, IEEE Transactions on Electron Devices.

2D analytical potential modeling of junctionless DG MOSFETs in subthreshold region including proposal for calculating the threshold voltage

B. Iniguez, A. Kloes, M. Schwarz, 2012, 2012 13th International Conference on Ultimate Integration on Silicon (ULIS).

Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

B. Iniguez, A. Kloes, M. Schwarz, 2013, IEEE Transactions on Electron Devices.