Peter P. Chow

发表

Direct deposition of GaN-based photocathodes on microchannel plates

Oswald H. W. Siegmund, Anton S. Tremsin, Jeffrey S. Hull, 2009, OPTO.

Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

Fan Ren, Changzhi Li, Yu-Lin Wang, 2008 .

Polarization management techniques for enhanced vertical and lateral transport in III-nitride superlattices

Amir Dabiran, Andrei Osinsky, Peter P. Chow, 2006, SPIE OPTO.

Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode

Robert R. Alfano, Amir Dabiran, Wubao Wang, 2012, OPTO.

AlGaN Schottky diodes for short-wavelength UV applications

James M. Van Hove, Andrew M. Wowchak, Peter P. Chow, 2001, SPIE OPTO.

A highly strained InAs/GaSb type II superlattice for LWIR detection

Peter P. Chow, Kan Mi, Wentao Lu, 2013, Optics & Photonics - Optical Engineering + Applications.

Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

Amir Dabiran, Ashok K. Sood, Yash R. Puri, 2007, SPIE OPTO.

Carrier screening effect in AlGaN quantum-well avalanche photodiode

Robert R. Alfano, Amir Dabiran, Wubao Wang, 2009, OPTO.

Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Thomas E. Anderson, Amir Dabiran, Ashok K. Sood, 2004, SPIE Optics + Photonics.

AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications

Yu-Lin Wang, Amir Dabiran, Nancy D. Denslow, 2010, Defense + Commercial Sensing.

Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

Yu-Lin Wang, Amir Dabiran, Jenshan Lin, 2008 .

High performance type II superlattice photo diodes for long wavelength infrared applications

Peter P. Chow, Kan Mi, Yiqiao Chen, 2011, Optical Engineering + Applications.

Optical anisotropy of GaN/sapphire studied by generalized ellipsometry and Raman scattering

James M. Van Hove, John M. Zavada, Andrew M. Wowchak, 1999, Photonics West.

AlGaAsSb as a top cell material for InP-based triple-junction solar cells

Peter P. Chow, Kan Mi, Wentao Lu, 2014, Optics & Photonics - Optical Engineering + Applications.

Group III-nitride materials for ultraviolet detection applications

James M. Van Hove, Andrew M. Wowchak, Peter P. Chow, 2000, Photonics West - Optoelectronic Materials and Devices.

Analysis of growth parameters and strain in GaInSb/InAs superlattices

James M. Van Hove, Andrew M. Wowchak, Peter P. Chow, 1994, Photonics West - Lasers and Applications in Science and Engineering.

Real-time monitoring and control of epitaxial semiconductor growth in a production environment by in situ spectroscopic ellipsometry

Ian Ferguson, Peter P. Chow, Shane Johnson, 1998 .

Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

Amir Dabiran, Ashok K. Sood, Yash R. Puri, 2005 .

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy

Peter P. Chow, J. M. Van Hove, R. Hickman, 1997 .

MBE grown AlGaN/GaN MODFETs with high breakdown voltage

Andrei Vescan, Andrew M. Wowchak, Peter P. Chow, 1999 .

Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors

Amir Dabiran, Stephen J. Pearton, Peter P. Chow, 2010 .

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, Richard Wilkins, 2001 .

GaN/AlGaN HBT fabrication

Albert G. Baca, R. F. Kopf, R. J. Shul, 2000 .

Selective Detection of Hg"II… Ions from Cu"II… and Pb"II… Using AlGaN/GaN High Electron Mobility Transistors

Amir Dabiran, Yiider Tseng, S. J. Pearton, 2007 .

Proton irradiation effects on AlN/GaN high electron mobility transistors

Amir Dabiran, Lin Zhou, David J. Smith, 2010 .

Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells

Robert R. Alfano, Amir Dabiran, Stephen Gundry, 2005 .

High Current, Common‐Base GaN ‐ AIGaN Heterojunction Bipolar Transistors

S. J. Pearton, Andrew M. Wowchak, Peter P. Chow, 1999 .

AlGaN/GaN High Electron Mobility Transistor Based Sensors for Environmental and Bio-Applications

Amir Dabiran, Nancy D. Denslow, Stephen J. Pearton, 2010 .

Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2008 .

Enhanced vertical transport in p-type AlGaN∕GaN superlattices

Amir Dabiran, Andrei Osinsky, Peter P. Chow, 2004 .

Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN

Amir Dabiran, Andrei Osinsky, Leonid Chernyak, 2003 .

Detection of halide ions with AlGaN∕GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2005 .

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

Amir Dabiran, Stephen J. Pearton, Peter P. Chow, 2012 .

Pyrometric interferometry for real time molecular beam epitaxy process monitoring

Andrew M. Wowchak, Peter P. Chow, J. M. Van Hove, 1994 .

Ordinary optical dielectric functions of anisotropic hexagonal GaN film determined by variable angle spectroscopic ellipsometry

John M. Zavada, Andrew M. Wowchak, Peter P. Chow, 2000 .

In Situ Multi-Wavelength Ellipsometric Control of Thickness and Composition For Bragg Reflector Structures

Craig M. Herzinger, Peter P. Chow, Blaine D. Johs, 1995 .

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

Amir Dabiran, Joel R. Wendt, C. Monier, 2001 .

Nanosecond Time-Resolved Emission Spectroscopy: Spectral Shifts due to Solvent-Excited Solute Relaxation

Peter P. Chow, William R. Ware, P. Chow, 1971 .

MgZnO/AlGaN heterostructure light-emitting diodes

Amir Dabiran, S. J. Pearton, O. Lopatiuk, 2004 .

Electronic states in modulation doped p-AlGaN/GaN superlattices

Andrei Osinsky, Stephen J. Pearton, Peter P. Chow, 2001 .

Improvement of R0A product of type-II InAs/GaSb superlattice MWIR/LWIR photodiodes

Peter P. Chow, Kan Mi, Yiqiao Chen, 2009 .

Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, S. J. Pearton, 2002 .

Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

Peter P. Chow, J. M. Van Hove, P. Chow, 1997 .

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

Amir Dabiran, Byoung Sam Kang, Andrei Osinsky, 2005 .

NANOFABRICATION OF THIN CHROMIUM FILM DEPOSITED ON SI(100) SURFACES BY TIP INDUCED ANODIZATION IN ATOMIC FORCE MICROSCOPY

Kang L. Wang, Peter P. Chow, Dawen Wang, 1995 .

Minipressure sensor using AlGaN/GaN high electron mobility transistors

Amir Dabiran, S. J. Pearton, Peter P. Chow, 2009 .

Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors

Amir Dabiran, S. J. Pearton, Andrei Osinsky, 2007 .

Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma

S. J. Pearton, Peter P. Chow, J. M. Van Hove, 2000 .

Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer

Amir Dabiran, P. Paul Ruden, Peter P. Chow, 2002 .

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .