Veena Rao

发表

New materials for 157-nm photoresists: characterization and properties

Roderick R. Kunz, Roger H. French, Fredrick C. Zumsteg, 2000, Advanced Lithography.

Lithographic and chemical contrast of single-component top-surface imaging (TSI) resists

Roger F. Sinta, Theodore H. Fedynyshyn, John M. Hutchinson, 1998, Advanced Lithography.

Top-surface imaging resists for EUV lithography

David R. Wheeler, Donna J. O'Connell, Gregory F. Cardinale, 1998, Advanced Lithography.

Apparel and fashion business as a means of micro, small and medium scale enterprise: a study on the opportunities and the challenges faced by women entrepreneurs

H G Joshi, Veena Rao, 2011 .

Distance Education for the Garment Industry in India

Veena Rao, 2010 .

Effect of sensitizer spatial distribution on dissolution inhibition in novolak/diazonaphthoquinone resists

Roger Fabian W. Pease, Veena Rao, Laura L. Kosbar, 1991, Other Conferences.

Progress in 193-nm top-surface imaging process development

David R. Wheeler, Guojing Zhang, John M. Hutchinson, 1998, Advanced Lithography.

Ultrathin photoresists for EUV lithography

Jonathan L. Cobb, Robert L. Brainard, Pawitter J. S. Mangat, 1999, Advanced Lithography.

University Intervention for Capacity Building and Social Empowerment through Garment Sector Based Distance Education Courses Suiting the Post Multi – Fibre Arrangement Era – Indian Context

Veena Rao, 2008 .

Defects and metrology of ultrathin resist films

Jonathan L. Cobb, Kevin M. Monahan, Paul M. Dentinger, 2000, Advanced Lithography.

Influence of residual casting solvent on the dissolution behavior of diazonaphthoquinone resists

William D. Hinsberg, Roger Fabian W. Pease, Veena Rao, 1993, Advanced Lithography.

Novel silicon-containing resists for EUV and 193-nm lithography

Jonathan L. Cobb, Veena Rao, Uzodinma Okoroanyanwu, 1999, Advanced Lithography.

Role of residual casting solvent in dissolution behavior of poly (3-methyl-4-hydroxystyrene) films

William D. Hinsberg, Roger Fabian W. Pease, Veena Rao, 1994, Advanced Lithography.

Progress in 157-nm lithography development at Intel: resists and reticles

Giang T. Dao, Andrew Grenville, John M. Hutchinson, 2000, Advanced Lithography.

Influence of sensitizer spatial distribution on the dissolution mechanism in diazonaphthoquinone resists

William D. Hinsberg, Roger Fabian W. Pease, Veena Rao, 1992, Advanced Lithography.

Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation

Jonathan L. Cobb, Robert L. Brainard, Veena Rao, 1999 .

Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography

Roger F. Sinta, Donna J. O'Connell, David R. Wheeler, 1998 .