Ys Oei

InP-based Monolithic Integrated Colorless Reflective Transceiver

H. de Waardt, E. Smalbrugge, R Richard Nötzel, 2008 .

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

Y Yohan Barbarin, E. Smalbrugge, R Richard Nötzel, 2006 .

Novel RIE-process for high quality InP-based waveguide structures

Ingrid Moerman, Fh Groen, J. W. Pedersen, 1995 .

Small-size, low-loss, 4-channel phased-array wavelength division (de)multiplexer on InP

Fh Groen, Mk Meint Smit, E. G. Metaal, 1993 .

Butt-coupling loss of 0.1 dB/interface in InP/InGaAs MQW waveguide-waveguide structures grown by selective area chemical beam epitaxy

Jh Joachim Wolter, Y. Oei, M. Leys, 1998 .

Polarization control of gain of stacked InAs∕InP (100) quantum dots at 1.55μm: Interplay between ground and excited state transitions

E. Smalbrugge, R Richard Nötzel, P. J. van Veldhoven, 2008 .