Alexsandre Ellison

A 3 kV Schottky barrier diode in 4H-SiC

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1998 .

SiC Crystal Growth by HTCVD

Björn Magnusson, Peder Bergman, Erik Janzén, 2004 .

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

Tsunenobu Kimoto, Qamar Ul Wahab, Anne Henry, 1997 .

Identification of divacancies in 4H-SiC

Björn Magnusson, Takeshi Ohshima, Adam Gali, 2006 .