J.F. Prairie

High-speed, low-power digital and analog circuits implemented in IBM SiGe BiCMOS technology

B.A. Randall, K.E. Fritz, B.K. Gilbert, 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

A 35 GS/s 5-Bit SiGe BiCMOS flash ADC with offset corrected exclusive-or comparator

B.K. Gilbert, E.S. Daniel, J.F. Prairie, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications

J.F. Prairie, J.S. Humble, P.J. Riemer, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology

J.F. Prairie, R.B. Elder, D.S. Jansen, 2004, IEEE Electron Device Letters.

Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier

J.F. Prairie, C.L. Chen, P.W. Wyatt, 2006, 2006 IEEE international SOI Conferencee Proceedings.