N. Arpatzanis

发表

Stability of n-channel a‐Si:H∕nc‐Si:H bilayer thin-film transistors under dynamic stress

G. Kamarinos, C. Dimitriadis, D. Tassis, 2008 .

Stability of Amorphous-Silicon and Nanocrystalline Silicon Thin-Film Transistors Under DC and AC Stress

A.T. Hatzopoulos, G. Kamarinos, C. Dimitriadis, 2007, IEEE Electron Device Letters.

Electrical and noise characterization of bottom-gated nanocrystalline silicon thin-film transistors

François Templier, Dimitrios H. Tassis, Charalabos A. Dimitriadis, 2006 .

On the α‐Particle Irradiation Effects in MESFETs

Z. Hatzopoulos, G. Papaioannou, N. Arpatzanis, 2000 .

QD technology and market prospects in the sectors of space exploration, biomedicine, defense, and security

C. Charitidis, C. Dimitriadis, N. Arpatzanis, 2008 .

Determination of bulk and interface density of states in polycrystalline silicon thin film transistors

G. Kamarinos, C. Dimitriadis, S. Siskos, 2007 .

Hot Carrier Effects in Self-aligned and Offset-Gated Polysilicon Thin-Film Transistors

G. Kamarinos, C. Dimitriadis, D. Tassis, 2005 .

Electrical and low frequency noise properties of 4H‐SiC p+–n–n+ junction diodes

C. Dimitriadis, A. Tsormpatzoglou, N. Camara, 2006 .

Analytical current-voltage model for nanocrystalline silicon thin-film transistors

C. Dimitriadis, D. Tassis, F. Templier, 2006 .

Experimental investigation of noise in 4H–SiC p+–n–n+ junctions

C. Dimitriadis, N. Camara, D. Tassis, 2006 .

Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

G. Kamarinos, N. Arpatzanis, A.T. Hatzopoulos, 2007, IEEE Transactions on Electron Devices.

Study of the Drain Leakage Current in Bottom-Gated Nanocrystalline Silicon Thin-Film Transistors by Conduction and Low-Frequency Noise Measurements

G. Kamarinos, N. Arpatzanis, A.T. Hatzopoulos, 2007, IEEE Transactions on Electron Devices.

Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors

C. A. Dimitriadis, G. Kamarinos, Dimitrios H. Tassis, 2006, Microelectron. Reliab..

A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation

S. Siskos, I. Pappas, Dimitrios H. Tassis, 2006 .

A Simple Polysilicon Thin-Film Transistor SPICE Model

S. Siskos, I. Pappas, G. Kamarinos, 2006, 2006 25th International Conference on Microelectronics.

Current–voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots

J. I. Lee, C. Dimitriadis, W. Choi, 2007 .

Effect of rapid thermal annealing on the noise properties of InAs∕GaAs quantum dot structures

Costas A. Charitidis, A. Tsormpatzoglou, Charalabos A. Dimitriadis, 2007 .

Ion irradiation induced defects in epitaxial GaAs layers

E. Gazis, G. Konstantinidis, W. Assmann, 1998 .

The gamma ray radiation effects in high-electron-mobility transistors

Z. Hatzopoulos, G. Papaioannou, N. Arpatzanis, 1995 .

1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors

François Templier, Dimitrios H. Tassis, Charalabos A. Dimitriadis, 2007 .

Experimental study of passivating ion-beam-induced distributed energy levels in n-GaAs by hydrogen species from boiling water

G. Papaioannou, P. Dimitrakis, E. Pinčík, 1995 .

Neutron radiation effects in high electron mobility transistors [AlGaAs/GaAs]

G. Papaioannou, A. Christou, N. Arpatzanis, 1997 .