C. Kim

Temperature dependent leakage currents in polycrystalline silicon thin film transistors

Jin Jang, Ki-Soo Sohn, Jin Jang, 1997 .

The effect of a zinc–tin-oxide layer used as an etch-stopper layer on the bias stress stability of solution-processed indium–gallium–zinc-oxide thin-film transistors

Hyun Jae Kim, Y. Rim, C. Kim, 2014 .

Combined effect of the large ionic radius and low electronegativity of lanthanum additive on solution-processed zinc–tin–oxide thin-film transistors

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2013 .

Influence of electric field intensity on the copper catalyst-mediated crystallization of amorphous silicon

D. Choi, Hyun-Chul Kim, Young-Bae Kim, 2005 .

Chemical stability and electrical performance of dual-active-layered zinc-tin-oxide/indium-gallium-zinc-oxide thin-film transistors using a solution process.

Hyun Jae Kim, Y. Rim, C. Kim, 2013, ACS applied materials & interfaces.

The effects of cu on field aided lateral crystallization (FALC) of amorphous silicon (a-si) films

D. Choi, Jae-Bok Lee, C. Kim, 2001 .

Improved electrical performance of an oxide thin-film transistor having multistacked active layers using a solution process.

Dong Lim Kim, Hyun Jae Kim, Y. Rim, 2012, ACS applied materials & interfaces.

Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Hyun Jae Kim, Tae Soo Jung, Joohye Jung, 2015, IEEE Transactions on Electron Devices.