Z. Fang

Jian H. Zhao, J.H. Zhao, D. Look, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Infrared Quenching and Thermal Recovery of Thermally Stimulated Current Spectra in GaAs

D. Look, Z. Fang, 1991 .

Defects due to nonstoichiometric growth in semi‐insulating GaAs and their effects on Si implantation activation efficiency

Jian H. Zhao, T. Schlesinger, L. Shan, 1989 .

Thermally stimulated current trap in GaN

H. Morkoç, A. Salvador, D. Look, 1996 .

Defects at oxygen plasma cleaned ZnO polar surfaces

D. Look, L. Brillson, G. Cantwell, 2010 .

Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy

D. Look, L. Brillson, H. L. Mosbacker, 2008 .

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

H. Morkoç, D. Look, Z. Fang, 2000 .

Characteristics of Deep Centers Observed in n-GaN Grown by Reactive Molecular Beam Epitaxy

H. Morkoç, D. Look, Wook Kim, 1999 .

Massive Point Defect Redistribution Near Semiconductor Surfaces and Interfaces and its Impact on Schottky Barrier Formation

D. Look, L. Brillson, Z. Fang, 2009 .

Hopping conduction and its photoquenching in molecular beam epitaxial GaAs grown at low temperatures

D. Look, Z. Fang, 1993 .

Nonalloyed ohmic contacts on low‐temperature molecular beam epitaxial GaAs: Influence of deep donor band

D. Look, H. Yamamoto, Z. Fang, 1990 .

Plasma-Etching-Enhanced Deep Centers in n-GaN Grown by Metalorganic Chemical-Vapor Deposition

D. Look, I. Adesida, Jung Han, 2003 .

Identification of Electron-Irradiation Defects in Semi-Insulating GaAs by Normalized Thermally Stimulated Current Measurements

D. Look, J. W. Hemsky, Z. Fang, 1997 .

Point Defect Characterization of GaN and ZnO

D. C. Reynolds, D. Look, J. Sizelove, 1999 .

Electrical Properties of Unintentionally Doped Semi-Insulating and Conducting 6H-SiC

S. R. Smith, D. Look, W. Mitchel, 2006 .

Annealing behavior of undoped bulk GaAs

Jian H. Zhao, X. J. Bao, J. Zhao, 1989 .

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

D. Look, J. E. Nostrand, Q. Xie, 1999 .

Deep centers in as-grown and electron-irradiated n-GaN

J. W. Hemsky, L. Polenta, L. Polenta, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Deep level characteristics in n-GaN with inductively coupled plasma damage

D. Look, I. Adesida, F. Khan, 2008 .

Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes

D. C. Reynolds, David C. Look, Z-Q. Fang, 2000 .

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Z-Q. Fang, Haipeng Tang, S. J. Rolfe, 2010 .

Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

D. Look, A. Krost, F. Khan, 2006 .

On the main irradiation-induced defect in GaN

David C. Look, Z-Q. Fang, D. Look, 2000 .

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

N. B. Smirnov, D. Look, A. Polyakov, 2002 .

Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

D. Look, L. Brillson, G. Cantwell, 2008 .

TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS

Jian H. Zhao, T. Schlesinger, Jichai Jeong, 1990 .

Study of defects in LEC-grown undoped SI-GaAs by thermally stimulated current spectroscopy

T. Schlesinger, A. Milnes, L. Shan, 1990 .

Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs

D. Look, K. Saarinen, S. Kuisma, 1997 .

Comparison of deep centers in semi‐insulating liquid‐encapsulated Czochralski and vertical‐gradient freeze GaAs

D. Look, Z. Fang, 1991 .

TRAP GETTERING BY ISOELECTRONIC DOPING OF P-GAAS AND N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY

Jian H. Zhao, T. Schlesinger, Jichai Jeong, 1989 .

Photoquenching and thermal recovery of a thermally stimulated current peak in semi‐insulating GaAs

D. Look, Z. Fang, 1993 .

Theoretical and experimental determination of deep trap profiles in semiconductors

Jian H. Zhao, T. Schlesinger, J. C. Lee, 1987 .

Evidence for EL6 (Ec− 0.35 eV) acting as a dominant recombination center in n‐type horizontal Bridgman GaAs

T. Schlesinger, Z. Fang, A. Milnes, 1987 .

The effects of the nonabrupt depletion edge on deep‐trap profiles determined by deep‐level transient spectroscopy

Jian H. Zhao, T. Schlesinger, Z. Fang, 1987 .

Suppression of copper-related level in LEC pGaAs by platinum diffusion

T. Schlesinger, Z. Fang, A. Milnes, 1987 .

The effect of annealing treatments on defect structure and diffusion lengths in bulk n‐type GaAs

T. Schlesinger, H. K. Kim, Z. Fang, 1989 .

Metastability of defects in p-GaAs grown from a Ga-rich melt

J. Kim, P. W. Yu, Z. Fang, 2001 .

Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

D. Look, W. Mitchel, B. Claflin, 2005 .

Thermoelectric effect spectroscopy measurements on semi-insulating GaN

D. Look, M Tomislav Pavlovic, Z. Fang, 2003 .

Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN

D. Look, Z. Fang, U. Desnica, 2002 .

Material analysis and characterization on zone refined and zone leveled vertical zone melt GaAs for radiation spectrometers

D. Look, T. Schlesinger, R. James, 1996 .

The investigation of custom grown vertical zone melt semi-insulating bulk gallium arsenide as a radiation spectrometer

D. Look, H. Chui, T. Schlesinger, 1995, 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record.

Photoquenching of hopping conduction in low‐temperature‐grown molecular‐beam‐epitaxial GaAs

D. Look, Z. Fang, 1992 .

Depletion approximation in semiconductor trap filling analysis: Application to EL2 in GaAs

D. Look, J. Sizelove, Z. Fang, 1996 .

Deep Traps in Molecular-Beam-Epitaxial GaAs Grown at Low Temperatures

C. E. Stutz, D. Look, J. Sizelove, 1994 .

Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy

D. Look, M Tomislav Pavlovic, Z. Fang, 1999 .

Electrical Field Enhanced Thermal Quenching of a Prominent thermally Stimulated Current Peak in Semi-insulating GaAs

D. Look, Z. Fang, 1995 .

On the energy level of EL2 in GaAs

D. Look, Z. Fang, 1999 .

Electron-Irradiation-Induced Deep Level in n -Type GaN

David C. Look, Z-Q. Fang, M. P. Mack, 1998 .

David C. Look, Z-Q. Fang, D. Look, 2002 .

Convenient determination of concentration and energy in deep‐level transient spectroscopy

D. Look, J. Sizelove, Z. Fang, 1995 .

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

David C. Look, Daniel S. Green, Z-Q. Fang, 2010 .

Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy

N. B. Smirnov, D. Look, R. Molnar, 2002 .

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Paul R. Berger, P. Thompson, N. Jin, 2003 .

Interplay of native point defects with ZnO Schottky barriers and doping

D. Look, L. Brillson, B. Svensson, 2012 .

D. Look, L. Brillson, M. Hetzer, 2009 .

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

N. B. Smirnov, D. Look, A. Polyakov, 2002 .

Characterization of deep centers in bulk n-type 4H–SiC

D. Look, A. Saxler, W. Mitchel, 2001 .

Deep centers in n-GaN grown by reactive molecular beam epitaxy

David C. Look, Z-Q. Fang, Hadis Morkoç, 1998 .

Characterization of near-surface traps in semiconductors: GaN

D. Look, Z. Fang, 2001 .

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

H. Morkoç, David J. Smith, D. Look, 1998 .

Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs

D. Look, J. Sizelove, Z. Fang, 1995 .

Simple Measurement of 300 K Electron Capture Cross Section for El2 in GaAs

D. Look, Z. Fang, 1996 .

Electron Irradiation Induced Deep Centers in Hydrothermally Grown ZnO

David C. Look, Z-Q. Fang, Bruce Claflin, 2007 .

Deep centers in semi‐insulating Fe‐doped native GaN substrates grown by hydride vapour phase epitaxy

Drew Hanser, David C. Look, Z-Q. Fang, 2008 .

Anomalous Capture and Emission from Internal Surfaces of Semiconductor Voids: Nanopores in SiC

J. Boeckl, D. Look, T. Sudarshan, 2004 .

Prominent Thermally Stimulated Current Trap in Low-Temperature-Grown Molecular-Beam Epitaxial GaAs

David C. Look, Z-Q. Fang, D. Look, 1993 .

Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

D. Look, J. Kouvetakis, B. Claflin, 2018 .

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

S. Saddow, D. Look, R. Chandrasekaran, 2004 .

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy

D. Look, B. Odekirk, B. Claflin, 2011 .

New AsGa related center in GaAs.

Look, D. Look, J. Sizelove, 1993, Physical review letters.

Effect of multistep wafer‐annealing on main traps in Czochralski‐grown semi‐insulating GaAs

D. Look, H. Yamamoto, Z. Fang, 1996 .