S. Takagi

Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors

H. Ohno, H. Koinuma, A. Ohtomo, 2004 .

Modeling and simulation of polycrystalline ZnO thin-film transistors

H. Ohno, S. Takagi, Tokyo Institute of Technology, 2003 .

Modeling and simulation of polycrystalline ZnO thin-film transistors

Tokyo Institute of Technology, Yokohama, H. Ohno, 2003, cond-mat/0308537.

Strain dependence of the performance enhancement in strained-Si n-MOSFETs

J. Welser, S. Takagi, J. Hoyt, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

High Mobility Thin Film Transistors with Transparent ZnO Channels

Masashi Kawasaki, Akira Ohtomo, Hideo Ohno, 2003 .

Back gate engineering for suppression of threshold voltage fluctuation in fully-depleted SOI MOSFETs

T. Numata, Y. Oowaki, M. Noguchi, 2000, 2000 IEEE International SOI Conference. Proceedings (Cat. No.00CH37125).

Evidence of electron-hole cooperation in SiO/sub 2/ dielectric breakdown

Shinichi Takagi, A. Toriumi, H. Satake, 1997, 1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual.

Experimental study of gate voltage scaling for TDDB under direct tunneling regime

Shinichi Takagi, Y. Toyoshima, S. Takagi, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).

On the universality of inversion-layer mobility in n- and p-channel MOSFETs

Shinichi Takagi, Akira Toriumi, S. Takagi, 1988, Technical Digest., International Electron Devices Meeting.

Photo-Irresponsive Thin-Film Transistor with MgxZn1-xO Channel

Masashi Kawasaki, Akira Ohtomo, Hideomi Koinuma, 2006 .

A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimes

Shinichi Takagi, Akira Toriumi, Junji Koga, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.