Lixing Zhou

发表

Study of traps in low-temperature polysilicon thin film transistors using a current transient method

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2021, Semiconductor Science and Technology.

Annealing ambient on the evolution of He-induced voids in silicon

C. H. Zhang, Y. Zhang, Lijing Han, 2011 .

Experimental investigation on dipole and band offset affected by charge neutrality level modulation

Wenwu Wang, Shiwei Feng, Yamin Zhang, 2022, Applied Physics A.

Microcalorimetric studies of the iridium catalyst for hydrazine decomposition reaction

Tao Zhang, Xiaodong Wang, M. Zheng, 2005 .

Electron mobility in silicon nanowires using nonlinear surface roughness scattering model

Wenwu Wang, Xiaolei Wang, J. Xiang, 2020, Japanese Journal of Applied Physics.

Characterization of Zr–Si–N films deposited by cathodic vacuum arc with different N2/SiH4 flow rates

Shi-ze Yang, Ga Zhang, Jun Huang, 2012 .

Influence of pulsed substrate bias on the structure and properties of Ti-Al-N films deposited by cathodic vacuum arc

Gu-ling Zhang, G. Lv, Xinhuan Wang, 2012 .

The effects of the annealing time on helium implantation in Si

Y. Zhang, L. Q. Zhang, Lixing Zhou, 2010 .

The formation and evolution of vacancy-type defects in Ar-implanted silicon studied by slow-positron annihilation spectroscopy

L. Q. Zhang, Yuzhen Yang, Lixing Zhou, 2009 .

Hydrothermal synthesis of Ag modified ZnO nanorods and their enhanced ethanol-sensing properties

Guang Sun, Guiyun Yi, Xiaodong Wang, 2017 .

Synthesis of layered hierarchical porous SnO2 for enhancing gas sensing performance

Xiaodong Wang, Guiyun Yi, Yawei Xu, 2016, Journal of Porous Materials.

Epitaxial growth mechanisms of single-crystalline GaN on single-crystalline graphene

W. Ge, B. Shen, Zhihong Zhang, 2021, CrystEngComm.

Identification of interfacial defects in a Ge gate stack based on ozone passivation

Tianchun Ye, Chao Zhao, Wenwu Wang, 2018, Semiconductor Science and Technology.

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Jun Luo, Chao Zhao, Wenwu Wang, 2020, IEEE Transactions on Electron Devices.

Understanding dipole formation at dielectric/dielectric hetero-interface

Tianchun Ye, Jing Zhang, Chao Zhao, 2018, Applied Physics Letters.

Synthesis, characterization, and gas-sensing properties of Ag/SnO2/rGO composite by a hydrothermal method

Jianliang Cao, Guang Sun, Xiaodong Wang, 2017, Journal of Materials Science: Materials in Electronics.

Experimental Investigation of Remote Coulomb Scattering on Mobility Degradation of Ge pMOSFET by Various PDA Ambiences

Tianchun Ye, Jing Zhang, Chao Zhao, 2019, IEEE Transactions on Electron Devices.

Comprehensive Study and Design of High-k/SiGe Gate Stacks with Interface-Engineering by Ozone Oxidation

Tianchun Ye, H. Yin, Chao Zhao, 2019, ECS Journal of Solid State Science and Technology.

Thermodynamic model of helium and hydrogen co-implanted silicon surface layer splitting

Y. Zhang, L. Q. Zhang, Lixing Zhou, 2010 .

FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors

Lixing Zhou, Junhua Qin, Xiaozhuang Lu, 2023, Journal of Physics: Conference Series.

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Wenwu Wang, Xiaolei Wang, J. Xiang, 2021, Journal of Semiconductors.

Experimental study of the ultrathin oxides on SiGe alloy formed by low-temperature ozone oxidation

H. Yin, Wenwu Wang, Junjie Li, 2020 .

Effect of Biaxial Bending Strains on the Electrical Characteristics of Flexible Low-Temperature Polysilicon Thin-Film Transistors

Chunsheng Guo, Shiwei Feng, Yamin Zhang, 2022, IEEE Transactions on Electron Devices.

Synthesis and characterization of monodisperse hollow SnO2 microspheres and their enhanced sensing properties to ethanol

Guang Sun, Guiyun Yi, Xiaodong Wang, 2018, Journal of Porous Materials.

Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

Chao Zhao, Wenwu Wang, Xiaolei Wang, 2019, Semiconductor Science and Technology.

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2021, IEEE Transactions on Electron Devices.

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

Shiwei Feng, Yamin Zhang, Lixing Zhou, 2022, IEEE Transactions on Electron Devices.

Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Shiwei Feng, Yamin Zhang, Lixing Zhou, 2022, Applied Physics Letters.

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Shiwei Feng, Yamin Zhang, Xiang Zheng, 2021 .

Comprehensive investigation of the interfacial charges and dipole in GeOx/Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

Tianchun Ye, Jing Zhang, Chao Zhao, 2018, Japanese Journal of Applied Physics.

Hole mobility degradation by remote Coulomb scattering and charge distribution in Al2O3/GeOx gate stacks in bulk Ge pMOSFET with GeOx grown by ozone oxidation

Tianchun Ye, Chao Zhao, Wenwu Wang, 2017 .

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Shiwei Feng, Hui Zhu, J. Xiang, 2023, Applied Physics Letters.