Hyunsuk Woo

发表

Determination of intrinsic mobility of a bilayer oxide thin-film transistor by pulsed I–V method

J. Hur, S. Jeon, Taeho Kim, 2017, Nanotechnology.

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

S. Jeon, Hyunsuk Woo, 2017, Scientific Reports.

Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu Se-based atomic switch

S. Jeon, Hyunsuk Woo, S. Vishwanath, 2018, Journal of Alloys and Compounds.

Electrical Properties in High-k HfO2 Capacitors with an Equivalent Oxide Thickness of 9 Å on Ru Metal Electrode

J. Roh, S. Yeom, Soon-Gil Yoon, 2005 .

Enhancement of resistive switching properties in Al2O3 bilayer-based atomic switches: multilevel resistive switching

S. Jeon, Hyunsuk Woo, S. Vishwanath, 2018, Nanotechnology.

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

S. Jeon, Hyunsuk Woo, 2017, Scientific Reports.

Excellent Resistive Switching Performance of Cu-Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu-Se/Al2O3 Interface.

S. Jeon, Hyunsuk Woo, S. Vishwanath, 2018, ACS applied materials & interfaces.

Non-volatile resistive switching in CuBi-based conductive bridge random access memory device

S. Jeon, Hyunsuk Woo, S. Vishwanath, 2018, Applied Physics Letters.

Impact of fast transient charging and ambient on mobility of WS2 field-effect transistor

S. Jeon, Junghak Park, Hyunsuk Woo, 2017 .

Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Soon-Gil Yoon, Jae Sung Roh, Seung Jin Yeom, 2005 .

EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

J. Roh, S. Yeom, Soon-Gil Yoon, 2005 .

High-k Nanomixed Hf x Al y O z Film Capacitors Grown on Ru Metal Electrodes by Atomic Layer Deposition

J. Roh, S. Yeom, Soon-Gil Yoon, 2005 .

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

Dong-Ho Kang, Sanghun Jeon, Jaewoo Shim, 2017, ACS applied materials & interfaces.