F. Takeuchi

Improvement of Tft Characteristics by Using Controlled Grains

Y. Mishima, F. Takeuchi, K. Suga, 1999 .

Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, F. Takeuchi, 2004 .

High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, Y. Ebiko, 2004 .

High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Y. Mishima, M. Takei, N. Sasaki, 2001, IEEE Electron Device Letters.

LP‐1: Late‐News Poster: Scaling Effects of Sub‐Micron Low‐Temperature Poly‐Si TFTs

K. Mishima, N. Sasaki, F. Takeuchi, 1999 .

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

N. Sasaki, A. Hara, F. Takeuchi, 2003 .

12.3: High Throughput CW‐Laser Lateral Crystallization for Low‐Temperature Poly‐Si TFTs and Fabrication of 16 bit SRAMs and 270MHz Shift Registers

F. Takeuchi, N. Sasaki, M. Takei, 2002 .

High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization

N. Sasaki, A. Hara, Y. Mishima, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Akito Hara, Nobuo Sasaki, Katsuyuki Suga, 2002 .