H. Tsai

发表

STRUCTURAL INVESTIGATION OF n-ZnO/p-GaN ULTRAVIOLET LIGHT-EMITTING DIODES GROWN BY ATOMIC LAYER DEPOSITION

M. J. Chen, M. Shiojiri, H. C. Chen, 2011 .

Structure and Ultraviolet Electroluminescence of $n \hbox{-ZnO/SiO}_{2}\hbox{-ZnO}$ Nanocomposite/$p$ -GaN Heterostructure Light-Emitting Diodes

M. Shiojiri, Miin-Jang Chen, J. Yang, 2010, IEEE Transactions on Electron Devices.

Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure

Hao-Hsiung Lin, Hsin-Mu Tsai, Ying-Sheng Huang, 2013 .

Electron microscopy investigations of V defects in multiple InGaN/GaN quantum wells and InGaN quantum dots

M. Shiojiri, H. Tsai, J. Yang, 2010, Journal of microscopy.

NANOSTRUCTURAL ANALYSIS OF A GaN-BASED VIOLET LASER DIODE

T. Y. Wang, J. Yang, H. Yen, 2008 .

Observation of V defects in multiple InGaN/GaN quantum well layers

M. Shiojiri, J. Yang, Z. Feng, 2007 .

Observation of ultrahigh density InGaN quantum dots

T. Y. Wang, M. Shiojiri, T. C. Wang, 2007 .

Optical and structural investigation on InGaN/GaN multiple quantum well light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

J. Chen, T. Detchprohm, Z. C. Feng, 2006, SPIE Optics + Photonics.

UV Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition

M. Shiojiri, Miin-Jang Chen, J. Yang, 2010, IEEE Journal of Quantum Electronics.

Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition

Zhe Chuan Feng, Theeradetch Detchprohm, Hung-Ling Tsai, 2006 .

Temperature-dependent photoluminescence of arsenic-doped Si nanocrystals

Miin-Jang Chen, J. Yang, H. Tsai, 2010 .