Do Hyung Kim

发表

Effect of magnesium oxide passivation on the performance of amorphous indium-gallium-zinc-oxide thin film transistors

B. Ju, Donghyeon Yoo, Sang Yeol Lee, 2012 .

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors

Sang Yeol Lee, D. Kim, Do Hyung Kim, 2012 .

Effect of interface states on the instability under temperature stress in amorphous SiInZnO thin film transistor

Sang Yeol Lee, D. Kim, Do Hyung Kim, 2011 .

Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor

C. Hwang, Seung Hee Lee, K. Ji, 2022, IEEE Electron Device Letters.

Channel-Shortening Effect Suppression of a High-Mobility Self-Aligned Oxide TFT Using Trench Structure

W. Jeong, S. K. Park, Seung Hee Lee, 2021, IEEE Electron Device Letters.

Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor

Donghyeon Yoo, Sang Yeol Lee, D. Kim, 2011 .