Bosul Kim

发表

Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer

Sang Yeol Lee, E. Chong, Bosul Kim, 2012 .

Interface State Control of Amorphous InGaZnO Thin Film Transistor by Surface Treatment of Gate Insulator

Sang Yeol Lee, Bosul Kim, Do-Hyung Kim, 2011 .

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

Sang Yeol Lee, Dae Hwan Kim, Yong Woo Jeon, 2011 .

Effect of Cu, CuO, and Cu–CuO Bilayer Source/Drain Electrodes on the Performance of the Pentacene Thin-Film Transistor

Sang-Hoon Lim, S. Rhee, D. Yun, 2009 .

Role of Adsorbed H2O on Transfer Characteristics of Solution-Processed Zinc Tin Oxide Thin-Film Transistors

Doohyun Kim, M. Hong, YeonJoo Jeong, 2012 .

Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistors

Sang Yeol Lee, D. Kim, Do Hyung Kim, 2012 .

The Effect of Self Assembled Monolayer(SAM) on the Back Interface of a-IGZO TFT

M. Han, Do Hwan Kim, Jeong‐Soo Lee, 2011 .

Effects of Plasma Process Induced Damages on Organic Gate Dielectrics of Organic Thin-Film Transistors

M. Hong, Keunkyu Song, Bosul Kim, 2008 .