E. Lefebvre

Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications

G. Dambrine, J. Grahn, L. Desplanque, 2008, IEEE transactions on microwave theory and techniques.

Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density

Mohammed Zaknoune, F. Mollot, F. Mollot, 2002 .