M. Y. Lee

CMOS device scaling beyond 100 nm

K. Fujihara, Sang-Bin Song, H. K. Kang, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Highly productive PCRAM technology platform and full chip operation: Based on 4F2 (84nm pitch) cell scheme for 1 Gb and beyond

K. S. Choi, S. H. Lee, H. C. Park, 2011, 2011 International Electron Devices Meeting.

FinFET Plus: A Scalable FinFET Architecture with 3D Air-Gap and Air-Spacer Toward the 3nm Generation and Beyond

K. S. Li, G. Luo, E. Hsieh, 2021, 2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

Ta/sub 2/O/sub 5//TiO/sub 2/ Composite Films For High Density DRAM Capacitors

J. Lee, K. Kwon, Y. Sun, 1993, Symposium 1993 on VLSI Technology.