Tatsunori Isogai

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2009 .

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2008 .

MFIS-structure Memory Device with High Quality Ferroelectric Sr2(Ta1-x Nbx)2O7 Formed by Physical Vapor Deposition and Oxygen Radical Treatment by Radical Oxygen Assisted Layer by Layer(ROALL) deposition

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2004 .