Yong Cai

发表

Pixel-based multichannel optical narrow band filter array

Huan Zhang, Yong Cai, Zi-ling Chen, 2020, Applied Optics and Photonics China.

Cascade Selective Window for Fast and Accurate Object Detection

Yong Cai, Shu Zhang, Mei Xie, 2015 .

Lateral bipolar transistor on SOI with dual-sidewalls structure

Lichun Zhang, Yong Cai, 2001, Other Conferences.

The Design of the FBG Sensor System for Strain Monitoring Specific to the Key Stratum in Casing Annulus

Jun He, Yong Cai, Hong Liang Pan, 2012 .

Stress and Deformation Mechanics Model of Sensing Structure in Micro-Machined Capacitive SOI Accelerometer

Bin Xu, Yue Zhang, Yong Cai, 2012 .

MPS‐based LS‐SVR Metamodeling Technique for Sheet Forming Optimization

Guangyao Li, Hu Wang, Yong Cai, 2010 .

Multi-Fields Simulation Model for Micro-Machined Capacitive Accelerometer

Bin Xu, Yong Cai, Qiang Dai, 2012 .

Experimental Modal Analysis of CNC High Precision Surface Grinder with Horizontal Spindle and Rotary Table MGK7350

Ze Yu Weng, Nan Nan Zhang, Yong Cai, 2010 .

Temperature dependence and thermal stability of planar-integrated enhancement/depletion-mode AlGan/GaN HEMTs and digital circuits

Yong Cai, Kevin J. Chen, Yong Cai, 2009 .

Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Transactions on Electron Devices.

Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Jin Wei, Baoshun Zhang, Yong Cai, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

Zhenchuan Yang, Yong Cai, Chak Wah Tang, 2007, IEEE Electron Device Letters.

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yugang Zhou, Yong Cai, K. Lau, 2006, IEEE Transactions on Electron Devices.

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer

Wei Huang, Baoshun Zhang, Yong Cai, 2016, IEEE Transactions on Electron Devices.

Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation

Wei Huang, Baoshun Zhang, Yong Cai, 2015, IEEE Electron Device Letters.

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

Baoshun Zhang, Kei May Lau, Shuo Jia, 2006 .

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With $10^{-13}$ A/mm Leakage Current and $10^{12}$ ON/OFF Current Ratio

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Baoshun Zhang, Qi Zhou, Jie Yuan, 2017, IEEE Electron Device Letters.

Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask

Xiaohua Ma, Yue Hao, Min Yu, 2014, IEEE Electron Device Letters.

Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs

Yugang Zhou, Kei May Lau, Yong Cai, 2005, 2005 Asia-Pacific Microwave Conference Proceedings.

DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Yugang Zhou, Yong Cai, K. Lau, 2007, IEEE Transactions on Electron Devices.

Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment

Yong Cai, K. Lau, Yong Cai, 2006, IEEE Electron Device Letters.

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

Baoshun Zhang, Shu Yang, Cheng Liu, 2015, IEEE Electron Device Letters.

Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors

Baoshun Zhang, Min Yu, Zhihua Dong, 2010 .

Analysis on the new mechanisms of low resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs

Yilong Hao, Baoshun Zhang, Min Yu, 2010 .

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

Baoshun Zhang, Wei Huang, Zhang Zhili, 2014 .

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Baoshun Zhang, Zhang Zhili, Jie Yuan, 2016 .

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)

Baoshun Zhang, Sheng Liu, Yong Cai, 2016 .

Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Zhenchuan Yang, Guizhen Yan, Baoshun Zhang, 2009, IEEE Electron Device Letters.

Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

Baoshun Zhang, Guodong Gu, Zhihong Feng, 2012, IEEE Electron Device Letters.

Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs

Yong Cai, K. Lau, Yong Cai, 2006, IEEE Electron Device Letters.

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using$hboxCF_4$Plasma Treatment

Yong Cai, K. Lau, Yong Cai, 2006, IEEE Transactions on Electron Devices.