E.S. Daniel

Ka-Band SiGe HBT Power Amplifier for Single-Chip T/R Module Applications

J.F. Prairie, J.S. Humble, P.J. Riemer, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology

J.F. Prairie, R.B. Elder, D.S. Jansen, 2004, IEEE Electron Device Letters.

Ka-band (35 GHz) 3-stage SiGe HBT low noise amplifier

P.J. Riemer, J.D. Coker, B.A. Randall, 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier

J.F. Prairie, C.L. Chen, P.W. Wyatt, 2006, 2006 IEEE international SOI Conferencee Proceedings.