Takeyoshi Onuma

发表

Nitrogen doped MgxZn1−xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates

Akira Ohtomo, Ken Nakahara, Hiroyuki Yuji, 2010 .

Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques

James S. Speck, Shuji Nakamura, Takayuki Sota, 2005 .

Influence of inn mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method

James S. Speck, Shuji Nakamura, Feng Wu, 2007 .

Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

Shingo Saito, Tohru Honda, Masataka Higashiwaki, 2015 .

Correlation between blue luminescence intensity and resistivity in β-Ga2O3 single crystals

Tohru Honda, Masataka Higashiwaki, Kohei Sasaki, 2013 .