C. Tatsuyama

发表

Migration of Conductive Ink using Silver-Copper Solid Solution Powder

S. Fujiki, J. Sato, C. Tatsuyama, 1998 .

Growth Process and Fractal Dimension of Silver Dendrite by Ionic Migration on Glass Substrate

S. Fujiki, C. Tatsuyama, K. Tanino, 1998 .

Two-step growth of SrTiO3 films on Sr-modulated Si(001) substrates

H. Kimura, Md. Nurul Kabir Bhuiyan, C. Tatsuyama, 2005 .

Growth of SrTiO3 films on Si(0 0 1)–Sr(2 × 1) surfaces

H. Kimura, Md. Nurul Kabir Bhuiyan, C. Tatsuyama, 2005 .

Structural Characterization of Si0.75Ge0.25 Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers

M. Rahman, C. Tatsuyama, T. Tambo, 2005 .

Reactivity at interfaces of Cu, Ag and Au−GaSe layered compounds

C. Tatsuyama, T. Tambo, 1989 .

Structural characterization of Si/Ge superlattices grown on an Si(001) surface by molecular beam epitaxy

K. Nakagawa, T. Shintani, M. Miyao, 1994 .

Initial stage of the growth of GaS thin films on GaAs

C. Tatsuyama, T. Tambo, A. Islam, 1998 .

Group Theoretical Analysis of Phonon Assisted Optical Transition in GaSe

C. Tatsuyama, S. Ichimura, 1978 .

Optical properties of dye molecules adsorbed on evaporated metal surfaces

H. Ueba, C. Tatsuyama, T. Moriguchi, 1987 .

AES, LEELS and XPS studies on the interface formation between layered semiconductors GaSe and InSe

H. Ueba, C. Tatsuyama, T. Tanbo, 1991 .

Stability of Two-Step-Growth Bi2Sr2CuOx Films on Si(001) using SrO Buffer Layer

C. Tatsuyama, T. Tambo, Akiyoshi Matsuda, 2002 .

Electrical and Optical Properties of GaSe-SnO2 Heterojunctions

C. Tatsuyama, S. Ichimura, 1976 .

XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe

C. Tatsuyama, S. Ichimura, H. Iwakuro, 1982 .

Barrier formation at Cu, Ag and Au-GaSe layered semiconductors

C. Tatsuyama, T. Tambo, 1989 .

Raman Study on the High Temperature Transition in V2O3

Y. Fujita, Y. Fujita, C. Tatsuyama, 1983 .

Passivation of GaAs surface by GaS

C. Tatsuyama, T. Tambo, A. Islam, 2000 .

Photoluminescence in GaSe

C. Tatsuyama, S. Ichimura, T. Matsumura, 1977, October 16.

Interface formation between the layered semiconductors GaSe and InSe

H. Ueba, C. Tatsuyama, T. Tanbo, 1992 .

Heteroepitaxy between layered semiconductors GaSe and InSe

C. Tatsuyama, T. Tanbo, N. Nakayama, 1990 .

GaSe nuclear particle detectors

C. Tatsuyama, E. Sakai, F. Takeda, 1989 .

Average energy needed to produce an electron-hole pair in GaSe nuclear particle detectors

C. Tatsuyama, E. Sakai, F. Takeda, 1988 .

XPS Study on the Chemical Shifts of Crystalline III–VI Layered Compounds

C. Tatsuyama, T. Tambo, 1985 .

GaSe−SnO2 heterojunction and its electroluminescence

C. Tatsuyama, S. Ichimura, 1977 .

Electrical and Optical Properties of GaSe

C. Hamaguchi, H. Tomita, J. Nakai, 1971 .

The Short-period (Si14/Ge1)20 and (Si28/Ge2)10 superlattices as Buffer Layers for the Growth of Si0.75Ge0.25 Alloy Layers

M. Rahman, C. Tatsuyama, T. Tambo, 2003 .

Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(0 0 1) substrates

M. Rahman, C. Tatsuyama, T. Tambo, 2001 .

The effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

H. Ueba, C. Tatsuyama, T. Obata, 1997 .

Low-energy-electron-loss spectroscopy of thin Ge layers on a GaAs(100) surface

H. Ueba, T. Kondo, C. Tatsuyama, 1988 .

Heteroepitaxy of Ge films on Si(100) surface

H. Ueba, C. Tatsuyama, Y. Kataoka, 1988 .

Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

H. Ueba, C. Tatsuyama, T. Obata, 1997 .

XPS Study on the Change of Surface Potential of GaSe and InSe Induced by Ar+ Sputtering

C. Tatsuyama, T. Tambo, 1984 .

XPS Study on the Oxidation of InSe

C. Tatsuyama, Izumi Miyake, Toyokazu Tanpo, 1984 .

Interdiffusion at Si/SiGe interface analyzed by high-resolution X-ray diffraction

M. Kawashima, Shuqi Zheng, M. Mori, 2006 .

Growth-temperature-dependent role of In(4×1) surface phase for the heteroepitaxy of InSb on Si(111)

B. V. Rao, C. Tatsuyama, T. Tambo, 2000 .

Characterization of GaS-deposited CVD diamond films by AES and XPS

Toshimichi Ito, C. Tatsuyama, T. Tambo, 2000 .

Interface formation between GaS and CVD diamond films

Toshimichi Ito, C. Tatsuyama, T. Tambo, 2000 .

High temperature oxidation of calcium hexaboride powders

Shuqi Zheng, G. Min, Z. Zou, 2004 .

Electrical and optical properties of intercalated GaSe compound

O. Ueno, C. Tatsuyama, S. Ichimura, 1981 .

On the Electrochromism of Evaporated V2O5 Films

Yuki Fujita, Katsuhiro Miyazaki, Chiei Tatsuyama, 1985 .

Heteroepitaxial growth of Ge films on the Si(100)‐2×1 surface

H. Ueba, M. Asai, C. Tatsuyama, 1985 .

Surface Phases and Processes on Si Surface

D. A. Tsukanov, N. Enebish, S. Kuznetsova, 2004 .

Adsorption mechanisms of In atoms onto the Si(111)-7× 7; Clustering and substitution for Si atoms

M. Mori, C. Tatsuyama, T. Tambo, 2005 .

Surfactant mediated growth of Sb clusters on Si(1 1 1) surface

C. Tatsuyama, V. Lifshits, T. Tambo, 2004 .

Adsorption of Sb on the In-induced surface reconstructions of Si(001) and Si(111) surfaces

C. Tatsuyama, T. Tambo, D. Li, 1998 .

Raman scattering and phase transitions in V2O3 and (V1-xCrx)2O3

H. Y. Fan, C. Tatsuyama, 1980 .

High Quality InSb Films Grown on Si(111) Substrate via InSb Bi-Layer

K. Maezawa, K. Ueda, M. Mori, 2009 .

Heteroepitaxial InSb films grown via Si(111)‐√7×√3‐In surface reconstruction

K. Maezawa, K. Ueda, M. Mori, 2008 .

Heteroepitaxy of Si films on a Ge(100)‐2×1 surface

H. Ueba, H. Kawabata, C. Tatsuyama, 1989 .

Sb adsorption onto In nanocluster array structure formed on a Si(111)–(7×7)

M. Mori, C. Tatsuyama, T. Tambo, 2005 .

The structural deformations in the Si/SiGe system induced by thermal annealing

Shuqi Zheng, M. Mori, C. Tatsuyama, 2007 .

Influence of UTA-Si buffer layers on the growth of SiGe films analyzed by high resolution X-ray reciprocal space map

M. Kawashima, M. Mori, C. Tatsuyama, 2004 .

Residual strain and surface roughness of Si1−xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate

H. Ueba, T. Asano, C. Tatsuyama, 2000 .

Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Sim/Gen)N superlattices

C. Tatsuyama, T. Tambo, H. Matada, 2001 .

Structural characterization of Si1−xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates

H. Ueba, T. Asano, C. Tatsuyama, 2000 .

Growth temperature dependence of GaS thin films on GaAs(001) surface

C. Tatsuyama, T. Tambo, A. Islam, 1999 .

Some Optical Properties of Layer-Type Semiconductor GaTe

C. Hamaguchi, J. Nakai, C. Tatsuyama, 1970 .

Growth of GaSe layered compound on a GaAs (001) surface

K. Fujita, H. Ueba, C. Tatsuyama, 1994 .

Interface formation between layered semiconductor GaSe and GaAs(001) surface

K. Fujita, C. Tatsuyama, T. Izumi, 1994 .

Growth temperature effect on the heteroepitaxy of InSb on Si(111)

B. V. Rao, M. Mori, C. Tatsuyama, 2000 .

Study of Sb adsorption on the Si(0 0 1)–In(4 × 3) surface

M. Mori, Y. Furukawa, C. Tatsuyama, 2003 .

How Si( 001 )–4×3-In reconstruction improves the epitaxial quality of InSb films grown on Si( 001 ) substrates

B. V. Rao, C. Tatsuyama, T. Tambo, 2001 .

Heteroepitaxial Growth and Superstructure of Ge on Si(111)–7×7 and (100)–2×1 Surfaces

H. Ueba, C. Tatsuyama, Katsuyuki Shoji, 1983 .

LEED/AES Studies of the Ge on Si(111)7×7 Surface

H. Ueba, C. Tatsuyama, Katsuyuki Shoji, 1983 .

Structural properties of heteroepitaxial Ge films on a Si(100)‐2×1 surface

H. Ueba, C. Tatsuyama, Y. Kataoka, 1988 .

Modification of Sb/Si(0 0 1) interface by incorporation of In(4 × 3) surface reconstruction

M. Mori, C. Tatsuyama, V. Lifshits, 2004 .

Surface structure evolution during Sb adsorption on Si(1 1 1) In(4×1) reconstruction

B. V. Rao, C. Tatsuyama, T. Tambo, 2002 .

Twinned InSb molecular layer on Si(1 1 1) substrate

B. V. Rao, M. Mori, C. Tatsuyama, 2001 .

Initial stage of heteroepitaxy of Ge on Si(111)-7 × 7 and (100)-2 × 1 surfaces studied by low-energy electron-loss spectroscopy (LEELS)

H. Ueba, C. Tatsuyama, N. Ishimaru, 1988 .

Growth Temperature Dependence of SrTiO3 Thin Films by Molecular Beam Epitaxy

H. Kimura, Md. Nurul Kabir Bhuiyan, C. Tatsuyama, 2005 .

Solid-Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001) Substrates at Low Temperature

H. Kimura, Md. Nurul Kabir Bhuiyan, C. Tatsuyama, 2004 .

Study of epitaxial SrTiO3 (STO) thin films grown on Si(0 0 1)–2 × 1 substrates by molecular beam epitaxy

Md. Nurul Kabir Bhuiyan, C. Tatsuyama, T. Tambo, 2003 .

In-situ Annealing of Thin SrO Films Grown on Si(001)-2×1 by Molecular Beam Epitaxy

C. Tatsuyama, T. Tambo, Akiyoshi Matsuda, 2000 .

Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy

C. Tatsuyama, T. Tambo, A. Shimizu, 2000 .

Improvement of electrical properties of epitaxial SrTiO3 films on Si(001)-2×1 by in situ annealing

K. Maeda, C. Tatsuyama, T. Tambo, 1999 .

Atomic structure and formation process of the Si(1 1 1)–Sb(√7 × √7) surface phase

B. V. Rao, M. Mori, Y. Furukawa, 2003 .

Effect of In(4×1) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate

B. V. Rao, C. Tatsuyama, T. Tambo, 2000 .

In(4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si(001) Substrate

B. V. Rao, C. Tatsuyama, T. Tambo, 1998 .

The role of (4×3) surface reconstruction induced by In adsorption for the heteroepitaxial growth of InSb on Si(001)-2×1 surface

C. Tatsuyama, T. Tambo, D. Li, 1998 .

Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers

M. Mori, H. Ueba, C. Tatsuyama, 1996 .

Observation of GaSe–SnO2 Heterostructure by XPS and AES

C. Tatsuyama, S. Ichimura, H. Iwakuro, 1982 .

Specular Beam Intensity and Surface-Morphology of Bsco Films Grown by MBE

S. Konishi, H. Ueba, S. Takeda, 1997 .

Substrate orientation dependence of the growth of GaSe thin films on GaAs

H. Ueba, C. Tatsuyama, T. Tambo, 1997 .

Ultrathin amorphous Si layer for the growth of strain relaxed Si0.75Ge0.25 alloy layer

M. Mori, C. Tatsuyama, T. Tambo, 2006 .

Short-Period (Si14/Ge1)N Superlattice Buffers for Growth of Si0.75Ge0.25 Alloy Layers

C. Tatsuyama, T. Tambo, K. Kurumatani, 2002 .

Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

M. Mori, C. Tatsuyama, N. Fujimoto, 2007 .

Heteroepitaxy of InSb films grown on a Si(001) substrate with AlSb buffer layer

M. Mori, C. Tatsuyama, N. Fujimoto, 2006 .

Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer

M. Mori, C. Tatsuyama, N. Fujimoto, 2003 .

Growth temperature effect on the heteroepitaxy of InSb films on a Si(00l) substrate covered with Ge islands

M. Mori, C. Tatsuyama, T. Tambo, 1998 .

Growth of InSb films on a Si(001) substrate with Ge buffer layer

M. Mori, H. Ueba, C. Tatsuyama, 1997 .

Low-temperature growth of InSb(1 1 1) on Si(1 1 1) substrate

M. Mori, C. Tatsuyama, T. Tambo, 2007 .

Effect of current flow direction on the heteroepitaxial growth of InSb films on Ge/Si(001) substrate heated by direct current

M. Mori, C. Tatsuyama, T. Tambo, 2000 .

Development of SnO2-based Gas Sensors for Detection of Volatile Organic Compounds

S. Fujiki, C. Tatsuyama, K. Tanino, 2001 .

Discrimination of Volatile Organic Compounds in Indoor Environment by an Integrated Thick-Film Gas Sensor

S. Fujiki, C. Tatsuyama, K. Tanino, 2000 .

Electroluminescence in Forward Biased GaSe-SnO2 Heterojunction

H. Mizukami, C. Tatsuyama, S. Ichimura, 1974 .

Atomic H-mediated (Si14/Ge1)20 superlattice buffers for the growth of Si0.75Ge0.25 alloy layers with low residual strain

C. Tatsuyama, T. Tambo, M. M. Rahman, 2004 .

Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth method

B. V. Rao, C. Tatsuyama, T. Tambo, 2001 .

Interface formation between layered-compound GaS and GaAs(111)A surface

C. Tatsuyama, T. Tambo, A. Islam, 1998 .