T. Okudaira

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

H. Arima, T. Matsukawa, A. Hachisuka, 1990, International Technical Digest on Electron Devices.

Source-to-drain nonuniformly doped channel (NUDC) MOSFET structures for high current drivability and threshold voltage controllability

Hideaki Arima, Takayuki Matsukawa, A. Hachisuka, 1992 .

Improvement of thermal stability of nickel silicide using N2ion implantation prior to nickel film deposition

K. Maekawa, K. Asai, T. Okudaira, 2006, 2006 International Workshop on Junction Technology.

A manufacturable integration technology of sputter-BST capacitor with a newly proposed thick Pt electrode

T. Okudaira, M. Matsushita, H. Miyoshi, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).