Y. Kim

Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics

L. Pantisano, R. Degraeve, U. Schwalke, 2003, IEEE Electron Device Letters.

Epitaxial Si punch-through based selector for bipolar RRAM

P. Bafna, P. Karkare, S. Lodha, 2012, 70th Device Research Conference.

Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy

P. Bafna, P. Karkare, S. Lodha, 2012, IEEE Electron Device Letters.

High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020 cm−3

Y. Nishi, R. Brennan, S.-L. Cheng, 2010, 2010 International Electron Devices Meeting.

Advanced gate dielectric materials for sub-100 nm CMOS

H. Iwai, S. Ohmi, I. Ueda, 2002, Digest. International Electron Devices Meeting,.

Integration of high-k gate stack systems into planar CMOS process flows

R. Bergmann, G. Bersuker, P. Zeitzoff, 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).