S. M. Zhang

发表

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Z. C. Li, Peng Chen, Zhongxin Liu, 2012 .

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

J. Zhu, D. Jiang, H. Yang, 2006 .

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films

Jianjun Zhu, Zhongxin Liu, D. Jiang, 2009 .

Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

Wenzhu Liu, Xiujian Sun, Z. S. Liu, 2009 .

Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition

Hui Yang, Uwe Jahn, Z. S. Liu, 2008 .

Role of edge dislocations in enhancing the yellow luminescence of n-type GaN

Z. S. Liu, Hui Yang, X. Y. Li, 2006 .

Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells

Liping Guo, Jiezhi Chen, Huanting Wang, 2006 .

Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition

Hui Yang, Dongshan Zhao, D. Jiang, 2004 .

Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films

X. Y. Li, Z. Liu, Hui Yang, 2006 .

Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition

Z. Liu, Hui Yang, Degang Zhao, 2009 .

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.

Z. Liu, J. P. Liu, H. Yang, 2015, Optics express.

Photoelectric characteristics of metal/InGaN/GaN heterojunction structure

Z. Liu, Wenzhu Liu, H. Yang, 2008 .

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

Hui Yang, Wenbao Liu, D. Jiang, 2008 .