Armigliato

Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates.

Nobili, Solmi, Parisini, 1996, Physical review. B, Condensed matter.

TEM/CBED determination of strain in silicon-based submicrometric electronic devices

Pavia, Armigliato, Frabboni, 2000, Micron.

Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon.

Nobili, Solmi, Parisini, 1994, Physical review. B, Condensed matter.

Extended x-ray-absorption fine-structure study of the local atomic structure in As+ heavily implanted silicon.

Allain, Parisini, Armigliato, 1992, Physical review. B, Condensed matter.

Dynamical simulation of LACBED patterns in cross-sectioned heterostructures

Wu, Armigliato, Frabboni, 2000, Micron.