N. G. Grigor’ev

Effect of topological placement of memory cells in memory chips on multiplicity of cell upsets from heavy charged particles

A. B. Boruzdina, N. G. Grigor’ev, A. Ulanova, 2014 .

Dominant mechanisms of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology

P. K. Skorobogatov, A. Y. Nikiforov, I. V. Poljakov, 2006 .

Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology

N. G. Grigor’ev, A. Ulanova, A. Boruzdina, 2019, Russian Microelectronics.

Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology

N. G. Grigor’ev, A. Ulanova, A. Boruzdina, 2019, Russian Microelectronics.