J. C. DeWinter

High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range

John Lehrer Zyskind, C. Caneau, M. A. Pollack, 1986 .

Buried heterojunction electroabsorption modulator

R. E. Nahory, Joe C. Campbell, M. A. Pollack, 1978 .

Growth and characterization of liquid−phase epitaxial InxGa1−xAs

R. E. Nahory, M. A. Pollack, R. Nahory, 1975 .

Liquid‐phase‐epitaxial InAsySb1−y on GaSb substrates using GaInAsSb buffer layers: Growth, characterization, and application to mid‐IR photodiodes

John Lehrer Zyskind, James W. Sulhoff, M. A. Pollack, 1987 .

Growth and properties of liquid‐phase epitaxial GaAs1−xSbx

R. E. Nahory, M. A. Pollack, R. Nahory, 1977 .

Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiver

R. E. Nahory, R. F. Leheny, E. D. Beebe, 1980 .