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S. Yamakoshi
发表
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
A. Kuramata, M. Higashiwaki, K. Sasaki, 2013, IEEE Electron Device Letters.