J.S. Moon

Submicron enhancement-mode AlGaN/GaN HEMTs

C. Ngo, T. Hussain, D. Wong, 2002, 60th DRC. Conference Digest Device Research Conference.

Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs

D. Pavlidis, T. Hussain, D. Wong, 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

C. McGuire, D. Wong, M. Micovic, 2008, IEEE Electron Device Letters.

Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation

P. Janke, A. Kurdoghlian, W.-S. Wong, 2002, IEEE Electron Device Letters.

K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz

P. Janke, T. Hussain, A. Kurdoghlian, 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).

Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications

D. Wong, M. Micovic, P. Hashimoto, 2005, IEEE Electron Device Letters.