T. M. Levin

Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

Fernando Ponce, Leonard J. Brillson, Gregg H. Jessen, 1999 .

Quantitative coherent diffractive imaging of an integrated circuit at a spatial resolution of 20 nm

Keith A. Nugent, Ian McNulty, Garth J. Williams, 2008 .

Low-energy cathodoluminescence spectroscopy of erbium-doped gallium nitride surfaces

Leonard J. Brillson, C. R. Abernathy, J. Schäfer, 1999 .

Parallax measurements of integrated circuit interconnects using a scanning transmission electron microscope

Z. Levine, S. Grantham, Suneeta S. Neogi, 2003 .

Localized states at GaN surfaces, Schottky barriers, and quantum well interfaces

C. Tu, C. Abernathy, G. Jessen, 2000 .

Defect formation near GaN surfaces and interfaces

C. R. Abernathy, C. Tu, C. Abernathy, 1999 .

Cathodoluminescence spectroscopy of deep defect levels at the ZnSe/GaAs interface with a composition-control interface layer

L. Vanzetti, L. Brillson, J. Paggel, 1999 .

Localized states at InGaN/GaN quantum well interfaces

G. Jessen, F. Ponce, L. Brillson, 1999 .

The Andreev reflection of rotons at the free surface of liquid4He

D. Edwards, T. M. Levin, H. Baddar, 1994 .

Mass Absorption Coefficient of Tungsten and Tantalum, 1450 eV to 2350 eV: Experiment, Theory, and Application

I. McNulty, A. Ankudinov, Z. Levine, 2003, Journal of research of the National Institute of Standards and Technology.