J. Petry

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

Wilfried Vandervorst, Marc Heyns, Matty Caymax, 2003 .

Reduction of the anomalous VT behavior in MOSFETs with high-κ/metal gate stacks

Luigi Pantisano, Nadine Collaert, Malgorzata Jurczak, 2007 .

Nanoscale post-breakdown conduction of HfO/sub 2//SiO/sub 2/ MOS gate stacks studied by enhanced-CAFM

M. Nafria, W. Vandervorst, X. Blasco, 2005, IEEE Transactions on Electron Devices.

A VFB tunable Single Metal Single Dielectric approach using As I/I into TiN/HfO2 for 32nm node and beyond

G. Boccardi, R. Singanamalla, J. Tseng, 2009, 2009 International Symposium on VLSI Technology, Systems, and Applications.

Scaling of high-k dielectrics towards sub-1nm EOT

S. De Gendt, D. Pique, S. Van Elshocht, 2003, 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Impact of incorporated Al on the TiN/HfO2 interface effective work function

John Robertson, Geoffrey Pourtois, G. Pourtois, 2008 .

On the Nature of Weak Spots in High-k Layers Submitted to Anneals

Wilfried Vandervorst, Olivier Richard, Annelies Delabie, 2004 .