Seong-Hwan Jang

High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD

Cheul-Ro Lee, Cheul‐Ro Lee, Seong-Hwan Jang, 2003 .

The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0 0 0 1)

Yongjo Park, Cheul-Ro Lee, Jae-Young Leem, 2002 .