Youngboo Moon

The effect of the low-mole InGaN structure and InGaN/GaN strained layer superlattices on optical performance of multiple quantum well active layers

Tae Geun Kim, K. Kim, Y. Sung, 2008 .

Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor

Gary S. Tompa, Nick M. Sbrockey, Elane Coleman, 2015, Journal of Electronic Materials.

Effects of As/P exchange reaction on the formation of InAs/InP quantum dots

Euijoon Yoon, Young Dong Kim, Sukho Yoon, 1999 .

Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

Tae-Soo Kim, Byung-Jun Ahn, Hwan-Kuk Yuh, 2012 .