J. Hillier

Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature

Y. Tsuchiya, H. Rutt, S. Saito, 2019, Front. Phys..

Silicon single-electron random number generator based on random telegraph signals at room temperature

Y. Tsuchiya, H. Rutt, S. Saito, 2020, AIP Advances.

Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate

Y. Tsuchiya, H. Rutt, S. Saito, 2018, Nanotechnology.

Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors

Y. Tsuchiya, S. Saito, K. Ishibashi, 2021, Nanotechnology.

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

D. Thomson, H. Arimoto, G. Reed, 2021, Frontiers in Physics.

Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature

Y. Tsuchiya, H. Rutt, S. Saito, 2020 .

Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate

Y. Tsuchiya, H. Rutt, S. Saito, 2018, Nanotechnology.