Dan Duncan

Modeling resistive switching materials and devices across scales

S. Ambrogio, Y. Nishi, A. Strachan, 2017, Journal of Electroceramics.

Hydrogen doping in HfO2 resistance change random access memory

Y. Nishi, B. Magyari-Köpe, Dan Duncan, 2016 .

Properties of Dopants in HfO x for Improving the Performance of Nonvolatile Memory

Dan Duncan, Yoshio Nishi, Blanka Magyari-Köpe, 2017 .

Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x

Y. Nishi, Liang Zhao, B. Magyari-Köpe, 2018 .

Dopant selection rules for extrinsic tunability of HfOx RRAM characteristics: A systematic study

Y. Nishi, Liang Zhao, B. Magyari-Kope, 2013, 2013 Symposium on VLSI Technology.

Ab-Initio Modeling of the Resistance Switching Mechanism in RRAM Devices: Case Study of Hafnium Oxide (HfO 2 )

Y. Nishi, B. Magyari-Köpe, Dan Duncan, 2012 .

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

Dan Duncan, Yoshio Nishi, Blanka Magyari-Kope, 2016, IEEE Electron Device Letters.

Aberrant phase separation is a common killing strategy of positively charged peptides in biology and human disease

Allie C. Obermeyer, Garrett M. Ginell, A. Kundaje, 2023, bioRxiv.