S. Merchant

发表

S. Merchant, S. Merchant, 1995 .

Energy capability of power devices with Cu layer integration

V. Macary, B. Baird, S. Merchant, 1999, 11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).

25V ESD NPN Transistor Optimized by Distributed Emitter Ballasting using Emitter Contact Area Segmentation

S. Pendharkar, M. Denison, S. Bychikhin, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

High performance 20-30 V LDMOS transistors in a 0.65 /spl mu/m-based BiCMOS compatible process

P. Hui, Rainer Thoma, R. Baird, 1997, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting.

Analytical model for the electric field distribution in SOI RESURF and TMBS structures

S. Merchant, S. Merchant, 1999 .