Chang-Yong Kang

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

Yoon-Ha Jeong, Hyun-Sik Choi, R. Jammy, 2009, IEEE Electron Device Letters.

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Byoung Hun Lee, Sung-Kyu Kwon, Sun-Ho Oh, 2014, IEEE Transactions on Electron Devices.

Aggressively scaled ultra thin undoped HfO/sub 2/ gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer

Se Jong Rhee, Manhong Zhang, J.C. Lee, 2005, IEEE Electron Device Letters.