T. Cosnier

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

M. Pala, L. Lucci, A. Torres, 2017, 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

TCAD-based design and verification of the components of a 200 V GaN-IC platform

S. Decoutere, O. Syshchyk, Pavan Vudumula, 2022, Solid-State Electronics.

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, A. Magnani, 2021 .

Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates

S. Decoutere, K. Geens, Xiangdong Li, 2020, 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

S. Decoutere, D. Wellekens, B. Bakeroot, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology

S. Decoutere, A. Neviani, O. Syshchyk, 2022, 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME).