Y. Noguchi

First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

T. Endoh, S. Fukami, S. Ikeda, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

Novel Quad interface MTJ technology and its first demonstration with high thermal stability and switching efficiency for STT-MRAM beyond 2Xnm

T. Endoh, S. Ikeda, S. Miura, 2019, 2019 Symposium on VLSI Technology.