Toshihide Nabatame

发表

Aluminum infrared plasmonic perfect absorbers for wavelength selective devices

Tadaaki Nagao, Thang Duy Dao, Satoshi Ishii, 2016, Optical Engineering + Applications.

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Kenji Okada, Koji Tominaga, Tsuyoshi Horikawa, 2005, Microelectron. Reliab..

DIELECTRICBREAKDOWN INHIGH-KGATEDIELECTRICS - MECHANISM AND LIFETIMEASSESSMENT -

Kenji Okada, Toshihide Nabatame, Hiroyuki Ota, 2007 .

HfSiOx-gate GaN MOS-HEMTs for RF power transistor

Toshihide Nabatame, Tamotsu Hashizume, Koji Shiozaki, 2021, OPTO.

0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO 2 and Si substrate

A. Toriumi, Toshihide Nabatame, Yukinori Morita, 2007 .

Hole Array Perfect Absorbers for Spectrally Selective Midwavelength Infrared Pyroelectric Detectors

Kai Chen, Tadaaki Nagao, Thang Duy Dao, 2016 .

Memristive characteristic of an amorphous Ga-Sn-O thin-film device

Yasuhiko Nakashima, Tokiyoshi Matsuda, Mutsumi Kimura, 2019, Scientific Reports.

Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies

Kazuhito Tsukagoshi, Toshihide Nabatame, Maki Shimizu, 2014 .

Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

Yoshiyuki Abe, Kazuhito Tsukagoshi, Toshihide Nabatame, 2013 .

Low frequency noise characteristics in HfAlOx/SiO2 n-MOSFETs

Koji Akiyama, Koji Tominaga, A. Toriumi, 2004 .

Infrared Perfect Absorbers Fabricated by Colloidal Mask Etching of Al–Al2O3–Al Trilayers

Kai Chen, Tadaaki Nagao, Thang Duy Dao, 2015 .

Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes

Atsushi Tanaka, Takashi Sekiguchi, Yoshio Honda, 2017 .

Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor

Toshihide Nabatame, Yukihiro Shimogaki, Wenwu Wang, 2005 .

Effect of Al-diffusion-induced positive flatband voltage shift on the electrical characteristics of Al-incorporated high-k metal-oxide-semiconductor field-effective transistor

Koji Akiyama, Akira Toriumi, Toshihide Nabatame, 2009 .

Metamaterial-enhanced vibrational absorption spectroscopy for the detection of protein molecules

Tadaaki Nagao, Toshihide Nabatame, Akihiko Ohi, 2016, Scientific Reports.

Impact of Surface Hydrophilicization prior to Atomic Layer Deposition for HfO2/Si Direct-Contact Gate Stacks

Akira Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Rutile-type TiO2 thin film for high-k gate insulator

Yasuhiro Shimamoto, Hiroshi Miki, Toshihide Nabatame, 2003 .

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Kazuhito Tsukagoshi, Toshihide Nabatame, T. Nabatame, 2013 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Koji Tominaga, Tsuyoshi Horikawa, Akira Toriumi, 2005 .

Reliable Extractions of EOT and Vfb in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances

A. Toriumi, Tsuyoshi Horikawa, Naoki Yasuda, 2005 .