C. A. Liechti

Microwave Field-Effect Transistors--1976

C. A. Liechti, C. Liechti, 1976 .

A GaAs MSI word generator operating at 5 Gbits/s data rate

A. F. Podell, G. L. Baldwin, E. Gowen, 1982 .

Solid-state circuits: Gallium arsenide spawns speed: Monolithic digital circuits employing `MESFET¿ devices promise multigigabit and higher data rates

C. A. Liechti, Rory L. Van Tuyl, 1977 .

Performance of Dual-Gate GaAs MESFET's as Gain-Controlled Low-Noise Amplifiers and High-Speed Modulators

C. A. Liechti, C. Liechti, 1975 .

Characteristics of Dual-Gate GaAs Mesfets

C. A. Liechti, 1974 .

Gallium Arsenide Digital Integrated Circuits.

C. A. Liechti, Rory L. Van Tuyl, 1974 .

A Cooled GaAs Mesfet Amplifier Operating at 12 GHz with 1.6 dB Noise Figure

C. A. Liechti, D. J. Mellor, R. B. Larrick, 1975, 1975 5th European Microwave Conference.