C. Stölmacker

发表

Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers

P. Leisher, P. Crump, R. Deri, 2020 .

Influence of the LED heterostructure on the degradation behavior of (InAlGa)N-based UV-B LEDs

Sven Einfeldt, Michael Kneissl, Arne Knauer, 2016, SPIE OPTO.

Temperature induced degradation of InAlGaN multiple-quantum well UV-B LEDs

M. Kneissl, M. Weyers, S. Einfeldt, 2015 .

Continuous-wave operation of DFB laser diodes based on GaN using 10$^{\rm th}$th-order laterally coupled surface gratings.

M. Kneissl, O. Brox, M. Weyers, 2020, Optics letters.

Micro-electroluminescence and micro-photoluminescence study on GaN-based laser diode aging

U. Schwarz, J. Kang, S. Einfeldt, 2022, OPTO.

Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

Sven Einfeldt, Michael Kneissl, Tim Wernicke, 2015 .

Longitudinal spatial hole burning and associated non-uniform current and carrier density profile as a power limit in high power diode lasers

G. Tränkle, P. Leisher, P. Crump, 2022, OPTO.

Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs

M. Kneissl, M. Weyers, S. Einfeldt, 2018, Journal of Applied Physics.