Jinqiao Xie

发表

Lasing and Longitudinal Cavity Modes in Photo-Pumped Deep Ultraviolet AlGaN Heterostructures

Wei Guo, Baxter Moody, Zlatko Sitar, 2013 .

X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

R. Dalmau, Z. Sitar, J. Tweedie, 2010 .

Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE

P. Fay, R. McCarthy, C. Youtsey, 2019, Materials.

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

K. Thonke, R. Dalmau, R. Schlesser, 2011 .

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Hadis Morkoç, Vitaliy Avrutin, Bo Xiao, 2009, OPTO.

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

Z. Sitar, R. Kirste, M. Bobea, 2013 .

On the strain in n-type GaN

J. Lebeau, Z. Sitar, J. Tweedie, 2011 .

Realization of GaN PolarMOS using selective-area regrowth by MBE and its breakdown mechanisms

E. Beam, D. Jena, H. Xing, 2019, Japanese Journal of Applied Physics.

Comparative study of etching high crystalline quality AlN and GaN

Z. Sitar, Wei Guo, J. Tweedie, 2013 .

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

H. Morkoç, Y. Fu, Jinqiao Xie, 2006 .

Comparative Study of Thin PZT Sol-gel Films Deposited on Pt and GaN Substrates

H. Morkoç, S. Chevtchenko, Jinqiao Xie, 2007 .

Kinase detection with gallium nitride based high electron mobility transistors.

Z. Sitar, R. Collazo, I. Bryan, 2013, Applied physics letters.

Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates

E. Beam, P. Fay, R. McCarthy, 2018, physica status solidi (a).

High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates

E. Beam, P. Fay, R. McCarthy, 2018, IEEE Electron Device Letters.

Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition

W. Guo, Z. Sitar, R. Collazo, 2012 .

Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications

R. Dalmau, Z. Sitar, J. Tweedie, 2011 .

Strain in Si doped GaN and the Fermi level effect

Z. Sitar, J. Tweedie, R. Collazo, 2011 .

Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions

T. Wunderer, K. Thonke, N. Johnson, 2013 .

Sharp bound and free exciton lines from homoepitaxial AlN

K. Thonke, R. Dalmau, Z. Sitar, 2011 .

On the origin of the 265 nm absorption band in AlN bulk crystals

Toru Kinoshita, Rafael Dalmau, Baxter Moody, 2012 .

Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements

Zlatko Sitar, Kentaro Furusawa, Seiji Mita, 2013 .

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

James Tweedie, Rafael Dalmau, Martin Feneberg, 2010, ECS Transactions.

High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2007 .

Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices

M. O. Manasreh, H. Morkoç, G. Salamo, 2006 .

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

H. Morkoç, D. Hofstetter, E. Baumann, 2006 .

High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates

Zlatko Sitar, Seiji Mita, Jinqiao Xie, 2015 .

Cavity polaritons in ZnO-based hybrid microcavities

H. Morkoç, V. Avrutin, Ü. Özgür, 2008 .

Characterization of dislocation arrays in AlN single crystals grown by PVT

R. Dalmau, Z. Sitar, R. Collazo, 2011 .

The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2014 .

Vacancy compensation and related donor-acceptor pair recombination in bulk AlN

Benjamin E. Gaddy, Toru Nagashima, Y. Kumagai, 2013 .

The 2018 GaN power electronics roadmap

Alex Q. Huang, Yuhao Zhang, Xu Li, 2018, Journal of Physics D: Applied Physics.

Microwave Performance of Ferroelectric-Gated GaN HEMTs

S. Datta, E. Beam, Chunlei Wu, 2020, 2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3∕PbO bridge layer

Hadis Morkoç, Natalia Izyumskaya, Vitaliy Avrutin, 2007 .

Ferroelectric PZT/AlGaN/GaN field effect transistors

Ya. I. Alivov, Q. Fan, Bo Xiao, 2006, SPIE OPTO.

Effect of potential fluctuations on photoluminescence in Mg‐doped GaN

H. Morkoç, Y. Moon, M. Reshchikov, 2005 .

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

James Tweedie, Rafael Dalmau, Zlatko Sitar, 2010 .

Investigation of forward and reverse current conduction in GaN films by conductive atomic force microscopy

Hadis Morkoç, A. A. Baski, Jinqiao Xie, 2004 .

Activation of buried p-GaN in MOCVD-regrown vertical structures

D. Jena, H. Xing, Xiang Gao, 2018, Applied Physics Letters.

Low Defect Density Bulk AlN Substrates for High Performance Electronics and Optoelectronics

M. Dudley, B. Raghothamachar, R. Dalmau, 2012 .

The effect of N-polar GaN domains as Ohmic contacts

Z. Sitar, J. Tweedie, R. Collazo, 2010 .

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2005 .

Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN

E. Beam, Xiaodong Yan, Han Wang, 2020 .

Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

E. Beam, Xiaodong Yan, Han Wang, 2020 .

Impact of gallium supersaturation on the growth of N‐polar GaN

R. Dalmau, Z. Sitar, J. Tweedie, 2011 .

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Zlatko Sitar, Seiji Mita, Ronny Kirste, 2013, Photonics West - Optoelectronic Materials and Devices.

Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity

R. Dalmau, Z. Sitar, J. Tweedie, 2010 .

Polarity control and growth of lateral polarity structures in AlN

W. Guo, M. Gerhold, M. Hoffmann, 2013 .

Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1−xN (0≤x≤1) deposition by LP OMVPE

James Tweedie, Zlatko Sitar, Seiji Mita, 2010 .

Thin-film GaN Schottky diodes formed by epitaxial lift-off

Patrick Fay, Edward Beam, Jinqiao Xie, 2017 .

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Wei Guo, Zlatko Sitar, Seiji Mita, 2014 .

Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

Toru Nagashima, Y. Kumagai, A. Koukitu, 2012 .

Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕GaN field effect transistor

Sang-Jun Cho, Hadis Morkoç, Q. Fan, 2006 .

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

Hadis Morkoç, Xianfeng Ni, Ryoko Shimada, 2008 .

High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

Patrick Fay, Lina Cao, Edward Beam, 2018, Applied Physics Letters.

Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN

James Tweedie, Zlatko Sitar, Ronny Kirste, 2011 .

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

K. Thonke, R. Dalmau, Z. Sitar, 2012 .

Fermi level effect on strain of Si-doped GaN

James Tweedie, Zlatko Sitar, Seiji Mita, 2011, OPTO.

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

H. Okamoto, Toru Nagashima, Y. Kumagai, 2012 .

Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage

C. Youtsey, Patrick Fay, L. Cao, 2018, 2018 76th Device Research Conference (DRC).

ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Hadis Morkoç, Ryoko Shimada, Vitaliy Avrutin, 2008, SPIE OPTO.

Refractive Indices of A-plane GaN Thin Films on R-plane Sapphire

J. Muth, M. Gerhold, A. Osinsky, 2005 .