Xiaorun Zhou

Optimization of growth conditions for strain compensated Ga0.32In0.68As/Ga0.61In0.39As multiple quantum wells

A. D. Smith, A. D. Smith, U. Bangert, 1994 .

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Bing-she Xu, Hailiang Dong, Yongzhen Yang, 2017, Nanoscale Research Letters.

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Xuguang Liu, Bing-she Xu, Hailiang Dong, 2017, Nanoscale Research Letters.

Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas

Xuguang Liu, Hailiang Dong, Xiaorun Zhou, 2017 .